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IRFZ24NPBF Infineon Power MOSFET
The IRFZ24NPBF from Infineon is a rugged N-channel HEXFET® power MOSFET designed for efficient, high-speed switching in demanding applications. For selection, its 55V breakdown voltage and 17A continuous drain current suit medium-power designs. The low on-resistance of 70mΩ at 10V gate drive minimizes conduction losses, enhancing overall system efficiency. With a gate charge of just 20nC and low 370pF input capacitance, it enables fast switching at reduced driver power. The robust ±20V gate voltage tolerance and 175°C maximum junction temperature ensure reliability in harsh environments. In application, it excels as a switching element in DC-DC converters for networking and telecom equipment, motor control drivers in industrial automation and power tools, and power management in uninterruptible power supplies (UPS) and solar inverters. Its TO-220AB through-hole package enables direct heatsink mounting, making it ideal for applications requiring manual assembly and effective thermal management. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 50+ | $ 0.16 |
| 1000+ | $ 0.15 |
| 20000+ | $ 0.15 |
| 30000+ | $ 0.15 |
Technical Specifications
- Part No.IRFZ24NPBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 70 mOhm @ 10A, 10V
- Power Dissipation (Max) 45W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
- Drain to Source Voltage (Vdss) 55V
- Input Capacitance (Ciss) (Max) @ Vds 370pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V