> Goods Details Page
> IRFZ34NPBF
IRFZ34NPBF Infineon Power MOSFET
The IRFZ34NPBF is a rugged N-channel HEXFET® power MOSFET in a TO-220AB through-hole package. Rated for 55V drain-source voltage and 29A continuous drain current, its low on-resistance (40mΩ max at 10V) minimizes conduction losses. These features make it ideal for DC-DC converters, motor drives, and power management circuits. Its through-hole mounting and wide –55°C to +175°C junction temperature range ensure reliable performance in industrial and automotive environments. Select this MOSFET when you need a proven, cost-effective solution for medium-power switching applications requiring high efficiency and robust thermal performance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.22 |
| 50+ | $ 0.17 |
| 1000+ | $ 0.16 |
| 20000+ | $ 0.16 |
| 30000+ | $ 0.16 |
Technical Specifications
- Part No.IRFZ34NPBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 40 mOhm @ 16A, 10V
- Power Dissipation (Max) 68W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
- Drain to Source Voltage (Vdss) 55V
- Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V