IRLB3036PBF Infineon Power MOSFET

The IRLB3036PBF from Infineon is a logic‑level gate drive N‑channel HEXFET® power MOSFET bringing extreme current handling, ultra‑low on‑resistance, and rugged avalanche capability into a TO‑220AB through‑hole package. For selection, it combines 60 V drain‑source voltage, 195 A continuous drain current at 25 °C case, and 2.4 mΩ maximum Rds(on) at 10 V gate drive to minimize conduction losses in high‑current paths; the 2.5 V gate threshold enables direct drive from 3.3 V or 5 V microcontrollers. A gate charge of 140 nC at 4.5 V and 380 W power dissipation suit moderate‑frequency hard‑switched topologies, while 100% avalanche testing and −55 °C to +175 °C junction operation ensure field reliability. In application, it excels in high‑efficiency synchronous rectification for SMPS, DC motor drives, uninterruptible power supplies, hard‑switched and high‑frequency circuits, inverters, switching regulators, and LED lighting where maximum current density and simplified gate drive are paramount In stock at HL Electronics – request a quote for fast delivery.