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IRLB8721PBF Infineon Power MOSFET
The IRLB8721PBF is a 30V N-channel HEXFET® power MOSFET from Infineon, housed in a TO-220AB package and featuring ultra-low on-resistance with Trench MOSFET technology for high efficiency in low-voltage power systems. For selection, verify a drain‑to‑source voltage (VDS) rating of 30V, continuous drain current (ID) of 62A (Tc), maximum RDS(on) of 8.7mΩ at VGS = 10V, gate‑source voltage (VGS) of ±20V, gate charge (Qg) of 13nC at 4.5V, power dissipation of 65W, and operating junction temperature of -55°C to 175°C. Ideal for UPS/inverter systems, high‑frequency synchronous buck converters for computer processor power, and high‑frequency isolated DC‑DC converters with synchronous rectification for telecom and industrial use. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.62 |
| 100+ | $ 0.50 |
| 1000+ | $ 0.47 |
| 15000+ | $ 0.47 |
| 30000+ | $ 0.47 |
Technical Specifications
- Part No.IRLB8721PBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 2.35V @ 25µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 8.7 mOhm @ 31A, 10V
- Power Dissipation (Max) 65W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
- Drain to Source Voltage (Vdss) 30V
- Input Capacitance (Ciss) (Max) @ Vds 1077pF @ 15V
- Current - Continuous Drain (Id) @ 25°C 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V