IRLR2908TRPBF Infineon Power MOSFET
The IRLR2908TRPBF from Infineon is a logic-level N-channel HEXFET® MOSFET designed for high-efficiency switching with minimal drive voltage. For selection, its key advantage is fully enhanced operation at just 4.5V gate drive with a low threshold voltage of 2.5V, allowing direct connection to microcontrollers and low-voltage logic without level shifters. The 80V breakdown voltage and 30A continuous drain current suit medium-power applications, while the 28mΩ on-resistance at 10V minimizes conduction losses. Its 33nC gate charge and 1890pF input capacitance enable fast, efficient switching. The D-Pak surface-mount package provides 120W power dissipation in a compact footprint. In application, it excels in DC-DC converters for networking and telecom equipment, motor control in battery-powered tools and automotive systems, and load switching in industrial automation. Its logic-level drive makes it ideal for portable devices, power management in servers, and synchronous rectification in low-voltage power supplies. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.53 |
| 100+ | $ 0.45 |
| 1000+ | $ 0.41 |
| 2000+ | $ 0.39 |
| 30000+ | $ 0.39 |
| 40000+ | $ 0.38 |
Technical Specifications
- Part No.IRLR2908TRPBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±16V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 28 mOhm @ 23A, 10V
- Power Dissipation (Max) 120W (Tc)
- Supplier Device Package D-Pak
- Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
- Drain to Source Voltage (Vdss) 80V
- Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
