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IRLR3110ZTRPBF Infineon Power MOSFET
The IRLR3110ZTRPBF is a logic-level N-channel HEXFET® MOSFET with a 100V drain-source rating and 42A continuous drain current. Its 14mΩ max on-resistance at 10V and low 2.5V threshold voltage enable direct drive from microcontrollers without external level shifters. The 48nC gate charge and D-Pak surface-mount package suit high-efficiency DC-DC converters, motor drives, and power management circuits in industrial and automotive applications. A wide –55°C to +175°C junction temperature range ensures robust thermal performance. Select this MOSFET for high-current switching where logic-level compatibility and low conduction losses are critical design requirements. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.48 |
| 100+ | $ 0.40 |
| 1000+ | $ 0.36 |
| 2000+ | $ 0.35 |
Technical Specifications
- PartNoIRLR3110ZTRPBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±16V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 14 mOhm @ 38A, 10V
- Power Dissipation (Max) 140W (Tc)
- Supplier Device Package D-Pak
- Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
- Drain to Source Voltage (Vdss) 100V
- Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V