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IRLR3705ZTRPBF Infineon Power MOSFET
The IRLR3705ZTRPBF from Infineon Technologies is a 55V N-Channel HEXFET® power MOSFET housed in a surface-mount DPAK (TO-252) package, specifically designed for automotive and industrial applications requiring logic-level drive capability. With an ultra-low RDS(on) of typically 6.6mΩ and maximum 8mΩ, it minimizes conduction losses in high-current circuits. The device features a gate threshold voltage below 3V, allowing direct interfacing with 5V microcontrollers and logic circuits without additional level shifting components. Capable of handling 42A continuous drain current with 130W power dissipation, it is suitable for fuel injection systems, anti-lock braking systems, DC-DC converters, and motor control applications. Infineon's advanced planar technology delivers enhanced avalanche ruggedness, while the fast switching characteristics reduce switching losses. Operating from -55°C to +175°C junction temperature, the device is 100% avalanche tested, RoHS compliant, lead-free, and halogen-free, supplied in tape and reel packaging for automated assembly processes. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.60 |
| 100+ | $ 0.50 |
| 1000+ | $ 0.46 |
| 2000+ | $ 0.44 |
Technical Specifications
- PartNoIRLR3705ZTRPBF
- Category Discrete Semiconductor Products
- Series HEXFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 55V
- Current - Continuous Drain (Id) @ 25°C 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 66nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
- Vgs (Max) ±16V
- FET Feature -
- Power Dissipation (Max) 130W (Tc)
- Rds On (Max) @ Id, Vgs 8 mOhm @ 42A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak