IRLU024NPBF Infineon Power MOSFET
The IRLU024NPBF from Infineon is a logic‑level N‑channel HEXFET® MOSFET packing 55V breakdown, 17A continuous drain current, and a low 65mΩ on‑resistance at 10V into the through‑hole IPAK (TO‑251) package. For selection, the gate‑source threshold of just 2V lets the device switch directly from 3.3V or 5V microcontrollers, while the fast 15nC gate charge and low 480pF input capacitance keep drive‑circuit size small and switching losses low. In application, it excels as a primary buck‑converter switch in transformer‑coupled DC‑DC bricks, a PWM motor‑bridge leg in small‑automation drives, and a load‑switch in home‑appliance heater or relay circuits. Industrial logic‑level supplies, building‑control valve drivers, and automotive auxiliary fans all benefit from its 175°C junction rating, rugged body‑diode dv/dt capability, and compact through‑hole mounting for single‑sided PCB assemblies. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.32 |
| 100+ | $ 0.26 |
| 750+ | $ 0.23 |
| 1500+ | $ 0.21 |
| 3000+ | $ 0.21 |
| 18000+ | $ 0.20 |
| 39000+ | $ 0.20 |
Technical Specifications
- Part No.IRLU024NPBF
- Series HEXFET®
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±16V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 2V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 65 mOhm @ 10A, 10V
- Power Dissipation (Max) 45W (Tc)
- Supplier Device Package IPAK (TO-251)
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
- Drain to Source Voltage (Vdss) 55V
- Input Capacitance (Ciss) (Max) @ Vds 480pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
