> Goods Details Page > SI7117DN-T1-GE3

Partno：SI7117DN-T1-GE3Encapsulation：

Brand：VISHAYParticular Year：

Classification：Packing：

Stock：3000SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.427679
Total： $ 0.43
Order Quantity： - +
Other Platform Purchase Links： No Data
  • PartNoSI7117DN-T1-GE3
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series TrenchFET®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 150V
  • Current - Continuous Drain (Id) @ 25°C 2.17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Vgs(th) (Max) @ Id 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 3.2W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs 1.2 Ohm @ 500mA, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Package / Case PowerPAK® 1212-8