> Goods Details Page > SI7613DN-T1-GE3

Partno：SI7613DN-T1-GE3Encapsulation：

Brand：VISHAYParticular Year：

Classification：Packing：

Stock：3000SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.429191
Total： $ 0.43
Order Quantity： - +
Other Platform Purchase Links： No Data
  • PartNoSI7613DN-T1-GE3
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series TrenchFET®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 20V
  • Current - Continuous Drain (Id) @ 25°C 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 2620pF @ 10V
  • Vgs (Max) ±16V
  • FET Feature -
  • Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
  • Rds On (Max) @ Id, Vgs 8.7 mOhm @ 17A, 10V
  • Operating Temperature -50°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Package / Case PowerPAK® 1212-8