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SI7898DP-T1-GE3 VISHAY Power MOSFET

SI7898DP-T1-GE3 - VISHAY - main product image
Part No.:SI7898DP-T1-GE3
Brand:VISHAY
Date Code:
Stock:6,441
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.84
100+ $ 0.71
750+ $ 0.65
1500+ $ 0.62
3000+ $ 0.60

Technical Specifications

  • Part No.SI7898DP-T1-GE3
  • Series TrenchFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 85 mOhm @ 3.5A, 10V
  • Power Dissipation (Max) 1.9W (Ta)
  • Supplier Device Package PowerPAK® SO-8
  • Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
  • Drain to Source Voltage (Vdss) 150V
  • Input Capacitance (Ciss) (Max) @ Vds -
  • Current - Continuous Drain (Id) @ 25°C 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
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