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Partno：SI7898DP-T1-GE3Encapsulation：

Brand：VISHAYParticular Year：

Classification：Packing：

Stock：6441SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.84478
Total： $ 0.84
Order Quantity： - +
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  • PartNoSI7898DP-T1-GE3
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series TrenchFET®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 150V
  • Current - Continuous Drain (Id) @ 25°C 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds -
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs 85 mOhm @ 3.5A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Package / Case PowerPAK® SO-8