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SI7997DP-T1-GE3 VISHAY Power MOSFET
Part No.:SI7997DP-T1-GE3
Brand:VISHAY
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.28 |
| 100+ | $ 1.11 |
| 750+ | $ 1.01 |
| 1500+ | $ 0.97 |
| 3000+ | $ 0.94 |
Technical Specifications
- PartNoSI7997DP-T1-GE3
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type 2 P-Channel (Dual)
- FET Feature Standard
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 60A
- Rds On (Max) @ Id, Vgs 5.5 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 6200pF @ 15V
- Power - Max 46W
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package PowerPAK® SO-8 Dual