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SIHB22N60ET1-GE3 VISHAY Power MOSFET

SIHB22N60ET1-GE3 - VISHAY - main product image
Part No.:SIHB22N60ET1-GE3
Brand:VISHAY
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.74
100+ $ 1.47
800+ $ 1.42
12000+ $ 1.42
24000+ $ 1.40

Technical Specifications

  • Part No.SIHB22N60ET1-GE3
  • Category Discrete Semiconductor Products
  • Series E
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600V
  • Current - Continuous Drain (Id) @ 25°C 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
  • Vgs (Max) ±30V
  • FET Feature -
  • Power Dissipation (Max) 227W (Tc)
  • Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package TO-263 (D2Pak)
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