> Goods Details Page > SIHG22N60E-GE3

Partno：SIHG22N60E-GE3Encapsulation：

Brand：VISHAYParticular Year：

Classification：Packing：

Stock：3000SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 1.83615
Total： $ 1.84
Order Quantity： - +
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  • PartNoSIHG22N60E-GE3
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series -
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600V
  • Current - Continuous Drain (Id) @ 25°C 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
  • Vgs (Max) ±30V
  • FET Feature -
  • Power Dissipation (Max) 227W (Tc)
  • Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Package / Case TO-247-3