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Partno：SIRA04DP-T1-GE3Encapsulation：
Brand：VISHAYParticular Year：
Classification：Packing：
Stock：9652SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.279578
Total：
$ 0.28
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoSIRA04DP-T1-GE3
- Category Discrete Semiconductor Products
- Series TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V
- Vgs (Max) +20V, -16V
- FET Feature -
- Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
- Rds On (Max) @ Id, Vgs 2.15 mOhm @ 15A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case PowerPAK® SO-8