> Goods Details Page > SIS892ADN-T1-GE3

Partno：SIS892ADN-T1-GE3Encapsulation：

Brand：VISHAYParticular Year：

Classification：Packing：

Stock：3000SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.630185
Total： $ 0.63
Order Quantity： - +
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  • PartNoSIS892ADN-T1-GE3
  • Category Discrete Semiconductor Products
  • Series TrenchFET®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 550pF @ 50V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs 33 mOhm @ 10A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Package / Case PowerPAK® 1212-8