> Goods Details Page > SQ2337ES-T1_GE3

Partno：SQ2337ES-T1_GE3Encapsulation：

Brand：VISHAYParticular Year：

Classification：Packing：

Stock：6449SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.346073
Total： $ 0.35
Order Quantity： - +
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  • PartNoSQ2337ES-T1_GE3
  • Category Discrete Semiconductor Products
  • Series Automotive, AEC-Q101, TrenchFET®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 80V
  • Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 3W (Tc)
  • Rds On (Max) @ Id, Vgs 290 mOhm @ 1A, 4.5V
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Surface Mount
  • Package / Case TO-236-3, SC-59, SOT-23-3