SQ2337ES-T1_GE3 VISHAY Power MOSFET
The SQ2337ES-T1_GE3 from Vishay is an automotive‑grade P‑channel 80 V TrenchFET® MOSFET in a compact SOT‑23 package, delivering 2.2 A continuous drain current with a 290 mΩ max Rds(on) at 4.5 V. For selection, its AEC‑Q101 qualification, 100 % Rg‑ and UIS‑tested ruggedness, and -55 °C to +175 °C operating range suit thermally challenging, space‑constrained designs. The 6 V/10 V drive voltage enables both low‑ and standard‑gate‑drive architectures, while 18 nC gate charge and 620 pF input capacitance simplify high‑frequency switching with modest driver burden. In application, the SQ2337ES‑T1_GE3 is purpose‑built for load switching in automotive body electronics, window‑lift and mirror‑fold actuators, LED lighting modules, and battery‑management systems. It equally serves industrial PLC outputs, relay‑coil drivers, DC‑DC converter stages, and power‑distribution circuits where a small‑footprint, high‑voltage P‑channel solution eliminates the need for charge‑pump gate drive. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.35 |
| 100+ | $ 0.28 |
| 750+ | $ 0.25 |
| 1500+ | $ 0.23 |
| 3000+ | $ 0.22 |
Technical Specifications
- Part No.SQ2337ES-T1_GE3
- Category Discrete Semiconductor Products
- Series Automotive, AEC-Q101, TrenchFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 3W (Tc)
- Rds On (Max) @ Id, Vgs 290 mOhm @ 1A, 4.5V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-3 (TO-236)
