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SQJ457EP-T1_GE3 VISHAY Power MOSFET
The SQJ457EP-T1_GE3 from Vishay Siliconix is an automotive-grade, -60V P-Channel TrenchFET® MOSFET, purpose-built for high-side switching in space-constrained, high-reliability applications. Its 25mΩ max Rds(on) at 10Vgs minimizes conduction losses, while the 38nC typical gate charge enables fast, efficient switching. Housed in a thermally capable PowerPAK® SO-8 package, it operates reliably across a wide -55°C to +175°C junction temperature range. As an AEC-Q101 qualified, 100% UIS and Rg tested device, it is the ideal solution for simplifying gate drive in automotive load switches, DC/DC primary-side converters, and reverse-battery protection circuits. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.49 |
| 100+ | $ 0.41 |
| 750+ | $ 0.37 |
| 1500+ | $ 0.36 |
| 3000+ | $ 0.34 |
Technical Specifications
- Part No.SQJ457EP-T1_GE3
- Series Automotive, AEC-Q101, TrenchFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type P-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 25 mOhm @ 10A, 10V
- Power Dissipation (Max) 68W (Tc)
- Supplier Device Package PowerPAK® SO-8
- Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
- Drain to Source Voltage (Vdss) 60V
- Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V