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STD2HNK60Z ST Power MOSFET
The STD2HNK60Z from STMicroelectronics is a 600V, 2A N-Channel SuperMESH™ power MOSFET housed in a surface-mount DPAK (TO-252) package, optimized for high-voltage switching applications. Developed using ST's proprietary SuperMESH technology—an extreme optimization of the PowerMESH layout—it significantly reduces on-resistance (4.8Ω max at 10Vgs) while ensuring excellent dv/dt capability for demanding conditions . The device features minimized gate charge (15nC typ), low input capacitance (280pF), and integrated Zener protection for improved ESD robustness and gate reliability . 100% avalanche tested and rated for operation from -55°C to +150°C, it dissipates up to 45W. This MOSFET excels in switch-mode power supplies, electronic ballasts, motor control circuits, and power distribution systems requiring reliable high-voltage switching with fast transient response. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.32 |
| 100+ | $ 0.24 |
| 1250+ | $ 0.21 |
| 2500+ | $ 0.20 |
Technical Specifications
- PartNoSTD2HNK60Z
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series SuperMESH™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 45W (Tc)
- Rds On (Max) @ Id, Vgs 4.8 Ohm @ 1A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package D-Pak