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STF24N65M2 ST Power MOSFET
The STF24N65M2 from STMicroelectronics is an N-channel power MOSFET built on MDmesh M2 technology, featuring a strip layout and enhanced vertical structure that deliver an ultra-low typical RDS(on) of 185mΩ and optimized switching behavior for demanding high-efficiency converters . Packaged in a fully insulated TO-220FP, it provides 2500V RMS insulation withstand voltage from all three leads to an external heatsink, eliminating the need for extra insulating hardware and simplifying thermal management . The device is 100% avalanche tested and Zener-protected, ensuring robust gate reliability without external clamping components . With extremely low gate charge (29nC), excellent output capacitance profile, and fast switching times (10ns turn-on delay, 25.5ns fall time), it excels in switch-mode power supplies, PFC circuits, motor drives, solar inverters, and high-frequency LLC resonant converters where efficiency and compact design are priorities In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.03 |
| 100+ | $ 0.88 |
| 1000+ | $ 0.84 |
Technical Specifications
- Part No.STF24N65M2
- Series MDmesh™ M2
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±25V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 230 mOhm @ 8A, 10V
- Power Dissipation (Max) 30W (Tc)
- Supplier Device Package TO-220FP
- Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
- Drain to Source Voltage (Vdss) 650V
- Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 100V
- Current - Continuous Drain (Id) @ 25°C 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V