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STP110N8F6 ST Power MOSFET
The STP110N8F6 from STMicroelectronics is an N‑channel 80 V STripFET F6 power MOSFET in TO‑220, optimized for high‑efficiency switching. For selection, 110 A continuous drain current, 6.5 mΩ max R‑DS(on) at 10 V, 150 nC gate charge and 200 W dissipation suit demanding designs; 100 % avalanche‑tested ruggedness and ‑55 °C to +175 °C operation ease thermal and reliability margins. In application it serves DC‑DC converters, synchronous rectification, motor drives, power tools, micro‑solar inverters, UPS, telecom/server/industrial power supplies, PFC and PWM stages, battery protection, and automotive EV traction inverters, where low conduction loss and fast switching are critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.53 |
| 100+ | $ 0.42 |
| 1000+ | $ 0.41 |
| 15000+ | $ 0.40 |
| 30000+ | $ 0.40 |
Technical Specifications
- Part No.STP110N8F6
- Series STripFET™ F6
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 6.5 mOhm @ 55A, 10V
- Power Dissipation (Max) 200W (Tc)
- Supplier Device Package TO-220
- Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
- Drain to Source Voltage (Vdss) 80V
- Input Capacitance (Ciss) (Max) @ Vds 9130pF @ 40V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V