SUM70101EL-GE3 VISHAY Power MOSFET

The SUM70101EL-GE3 from Vishay Siliconix is a 100V N-Channel TrenchFET® power MOSFET housed in a thermally enhanced surface-mount TO-263 (D2PAK) package, engineered to deliver an industry-leading combination of low on-resistance and high current handling for demanding power conversion. Its TrenchFET® Gen IV technology achieves a typical RDS(on) of just 2.1mΩ at 10Vgs, dramatically reducing conduction losses in high-efficiency DC-DC converters, telecom power supplies, and server voltage regulators. Capable of handling 120A continuous drain current, it excels in synchronous rectification and OR-ing applications where minimizing forward voltage drop directly improves system efficiency. The device features a low typical gate charge of 95nC for fast switching and reduced gate drive requirements. It is 100% Rg and UIS tested, RoHS compliant, halogen-free per IEC 61249-2-21, and operates reliably from -55°C to +175°C junction temperature. Its robust avalanche rating and superior thermal characteristics make it ideal for industrial power systems, solar inverters, motor drives, and battery management applications where reliability and efficiency are critical. In stock at HL Electronics – request a quote for fast delivery.

SUM70101EL-GE3 - VISHAY - main product image
Part No.:SUM70101EL-GE3
Brand:VISHAY
Date Code:
Stock:12,500
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 2.21
100+ $ 1.98
800+ $ 1.92
12000+ $ 1.91
24000+ $ 1.89

Technical Specifications

  • PartNoSUM70101EL-GE3
  • Series TrenchFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type P-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 10.1 mOhm @ 30A, 10V
  • Power Dissipation (Max) 375W (Tc)
  • Supplier Device Package TO-263 (D2Pak)
  • Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
  • Drain to Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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